18605275. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Naoki Matsumoto of Miyagi (JP)
Shinya Tamonoki of Miyagi (JP)
PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18605275 titled 'PLASMA PROCESSING APPARATUS
Simplified Explanation:
The patent application describes a plasma processing apparatus that can operate in three different modes by controlling the power sources supplying electric signals to the antenna and electrodes.
- The apparatus has three power sources: one for the antenna, one for the electrodes, and one for a DC signal or a third RF signal to the electrodes.
- The controller manages the power sources to enable three distinct plasma processing modes.
- The first power source supplies a first RF signal to the antenna, while the second power source supplies a second RF signal to the electrodes.
- The third power source provides a lower frequency RF signal or a DC signal to the electrodes.
Key Features and Innovation:
- Ability to switch between three different plasma processing modes.
- Control of power sources to optimize plasma processing.
- Use of different RF frequencies for the antenna and electrodes.
- Introduction of a DC signal option for plasma processing.
Potential Applications:
- Semiconductor manufacturing.
- Thin film deposition.
- Surface cleaning and modification.
- Plasma etching processes.
Problems Solved:
- Enhances control and flexibility in plasma processing.
- Improves efficiency and effectiveness of plasma-based applications.
- Enables customization of plasma processing for different materials and applications.
Benefits:
- Enhanced performance in plasma processing.
- Increased precision and control over plasma parameters.
- Versatile and adaptable for various industrial applications.
Commercial Applications:
Plasma processing equipment manufacturers can integrate this technology into their systems to offer advanced plasma processing capabilities to industries such as semiconductor manufacturing, electronics production, and materials science research.
Questions about Plasma Processing Apparatus:
1. How does the apparatus optimize plasma processing efficiency? 2. What are the specific advantages of using different RF frequencies for the antenna and electrodes in plasma processing?
Original Abstract Submitted
A plasma processing apparatus includes a first power source configured to supply a first electric signal to an antenna, the first electric signal including a first RF signal having a first RF frequency; a second power source configured to supply a second electric signal to at least one electrode, the second electric signal including a second RF signal having a second RF frequency; a third power source configured to supply a third electric signal to the at least one electrode, the third electric signal including a third RF signal or a DC signal having a third RF frequency that is lower than the first RF frequency and the second RF frequency; and a controller configured to control the first power source, the second power source, and the third power source so as to selectively execute a first, a second, and a third plasma processing mode.
