18108719. DIPOLE FORMATION PROCESSES simplified abstract (Applied Materials, Inc.)

DIPOLE FORMATION PROCESSES

Organization Name

Applied Materials, Inc.

Inventor(s)

Tianyi Huang of Santa Clara CA (US)

Srinivas Gandikota of Santa Clara CA (US)

Yixiong Yang of Fremont CA (US)

Tengzhou Ma of San Jose CA (US)

Steven C.H. Hung of Sunnyvale CA (US)

Hsin-Jung Yu of Santa Clara CA (US)

Geetika Bajaj of Cupertino CA (US)

DIPOLE FORMATION PROCESSES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18108719 titled 'DIPOLE FORMATION PROCESSES

Simplified Explanation: The patent application describes methods of manufacturing and processing semiconductor devices to achieve reduced thickness, lower thermal budget, and improved device performance without the need for an annealing process.

Key Features and Innovation:

• Methods of manufacturing electronic devices with reduced thickness and improved performance.
• Achieving desired dipole effect without annealing process.
• Controlling surface adsorption equilibrium to control the fraction of substrate surface atomic sites occupied by dipole species.

Potential Applications: The technology can be applied in the manufacturing of various electronic devices such as sensors, memory devices, and integrated circuits.

Problems Solved: The technology addresses the challenges of achieving desired dipole effect in electronic devices without the need for high-temperature annealing processes.

Benefits:

• Improved device performance and reliability.
• Reduced thickness and lower thermal budget requirements.
• Enhanced control over surface adsorption equilibrium.

Commercial Applications: The technology can be utilized in the semiconductor industry for the production of advanced electronic devices with improved performance and reliability, catering to a wide range of applications.

Prior Art: Readers can explore prior research on methods of controlling dipole effects in semiconductor devices and the impact of annealing processes on device performance.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing techniques and the development of novel electronic devices with improved performance and reliability.

Questions about Semiconductor Device Manufacturing: 1. How does controlling surface adsorption equilibrium impact the performance of electronic devices? 2. What are the potential drawbacks of not using an annealing process in semiconductor device manufacturing?

Original Abstract Submitted

Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices which meet reduced thickness, lower thermal budget, and Vrequirements, and have improved device performance and reliability. Advantageously, the embodiments of the present disclosure provide methods of manufacturing electronic devices that achieve desired dipole effect without an annealing process. To achieve desired dipole effect that is “thinner” than 3 Å, embodiments of the disclosure advantageously include methods of controlling surface adsorption equilibrium and, in turn, controlling the fraction of substrate surface atomic sites that are occupied by dipole species, which is not considered to be achievable by ALD processes.