Lg display co., ltd. (20240222340). DISPLAY DEVICE simplified abstract
Contents
DISPLAY DEVICE
Organization Name
Inventor(s)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222340 titled 'DISPLAY DEVICE
The abstract describes a display device with a thin-film transistor on a substrate, including various layers and patterns for functionality.
- Thin-film transistor on substrate
- Layers include active layer, gate electrode, first electrode pattern, second electrode pattern
- Insulating layer on thin-film transistor
- Barrier layer on insulating layer
- Planarization layer on barrier layer
- First electrode on planarization layer
- Barrier layer electrically connected to first electrode pattern
Potential Applications: - Display screens for electronic devices - Monitors for computers and TVs - Touchscreen panels for smartphones and tablets
Problems Solved: - Enhances display quality and performance - Improves durability and longevity of display devices - Enables efficient and reliable operation of electronic screens
Benefits: - Crisp and clear display resolution - Long-lasting and durable screens - Enhanced user experience with responsive touchscreens
Commercial Applications: Title: Advanced Display Technology for Enhanced Visual Experience This technology can be utilized in various commercial applications such as: - Consumer electronics industry - Information display systems - Entertainment and gaming devices
Questions about Display Device Technology: 1. How does the thin-film transistor contribute to the functionality of the display device? The thin-film transistor controls the individual pixels on the display screen, allowing for precise color and brightness adjustments.
2. What are the advantages of having a planarization layer in the display device? The planarization layer ensures a smooth and uniform surface for the deposition of subsequent layers, improving overall display quality and performance.
Original Abstract Submitted
a display device includes a thin-film transistor disposed on a substrate including an active layer, a gate electrode, a first electrode pattern, and a second electrode pattern; an insulating layer is disposed on the thin-film transistor; a barrier layer is disposed on the insulating layer; a planarization layer is disposed on the barrier layer; and a first electrode is disposed on the planarization layer, wherein the barrier layer is electrically connected to the first electrode pattern through the first electrode.
