Samsung electronics co., ltd. (20240224507). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224507 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application includes an active pattern on a substrate, a gate structure, a conductive filling pattern, and a bit line structure on the conductive filling pattern. The gate structure extends through the upper portion of the active pattern, with its upper surface higher than the active pattern's upper surface. The conductive filling pattern consists of a lower portion on the active pattern and an upper portion. The lower portion contacts the upper sidewall of the gate structure, while the upper portion has a width greater than the lower portion.
- Active pattern on a substrate
- Gate structure with upper surface higher than active pattern
- Conductive filling pattern with lower and upper portions
- Lower portion contacts gate structure's sidewall
- Upper portion wider than lower portion
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Improved performance of semiconductor devices - Enhanced conductivity and efficiency
Benefits: - Higher functionality - Increased speed and reliability - Better overall performance
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to faster and more efficient products in various industries such as telecommunications, computing, and consumer electronics. The market implications include improved competitiveness for companies adopting this innovation.
Prior Art: Readers can explore prior patents related to semiconductor device structures, gate structures, and conductive filling patterns to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Stay updated on the latest research in semiconductor device manufacturing, gate structure design, and conductive materials to enhance your knowledge of cutting-edge developments in the industry.
Questions about Semiconductor Devices: 1. What are the key advantages of using advanced gate structures in semiconductor devices? Advanced gate structures in semiconductor devices offer improved performance, enhanced conductivity, and increased efficiency, leading to faster and more reliable electronic products.
2. How does the width of the upper portion of the conductive filling pattern impact the overall functionality of the semiconductor device? The wider upper portion of the conductive filling pattern allows for better conductivity and efficiency within the device, contributing to its overall performance and reliability.
Original Abstract Submitted
a semiconductor device includes an active pattern on a substrate, a gate structure, a conductive filling pattern and a bit line structure on the conductive filling pattern. the gate structure extends through an upper portion of the active pattern, and has an upper surface higher than an upper surface of the active pattern. the conductive filling pattern includes a lower portion on the active pattern and an upper portion thereon. the lower portion contacts an upper sidewall of the gate structure, and the upper portion has a width greater than a width of the lower portion.
