Samsung electronics co., ltd. (20240224503). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Changhwa Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224503 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract consists of a substrate, a first electrode, a multilayer dielectric structure, and a second electrode. The multilayer dielectric structure includes dielectric films, with the first dielectric film containing crystalline TiO2 or crystalline SrTiO, and the second dielectric film being a high-k dielectric film with a tetragonal crystal structure.
- The semiconductor device features a multilayer dielectric structure with specific dielectric films for enhanced performance.
- The first dielectric film in the structure contains either crystalline TiO2 or crystalline SrTiO, contributing to the device's properties.
- The second dielectric film is a high-k dielectric film with a tetragonal crystal structure, further improving the device's functionality.
- The device design aims to optimize electrical properties and overall performance through the unique dielectric structure.
- The use of specific materials in the dielectric films enhances the device's capabilities in semiconductor applications.
Potential Applications: This technology can be applied in various semiconductor devices, such as transistors, capacitors, and memory storage components.
Problems Solved: The technology addresses the need for improved dielectric materials in semiconductor devices to enhance performance and efficiency.
Benefits: The semiconductor device with the described dielectric structure offers enhanced electrical properties, improved functionality, and increased performance in various applications.
Commercial Applications: This technology has potential commercial uses in the semiconductor industry for developing advanced electronic devices with superior performance and efficiency.
Questions about the technology: 1. How does the specific composition of the dielectric films impact the performance of the semiconductor device? 2. What are the potential limitations or challenges associated with implementing this dielectric structure in semiconductor devices?
Original Abstract Submitted
a semiconductor device includes a substrate, a first electrode disposed above the substrate, a multilayer dielectric structure configured to cover the first electrode, and a second electrode configured to cover the multilayer dielectric structure. the multilayer dielectric structure includes a plurality of dielectric films, a first dielectric film of the plurality of dielectric films includes crystalline tioor crystalline srtio, and a second dielectric film of the plurality of dielectric films is in contact with the first dielectric film and includes a high-k dielectric film having a tetragonal crystal structure.
