Intel corporation (20240213324). ELONGATED CONTACT FOR SOURCE OR DRAIN REGION simplified abstract
Contents
ELONGATED CONTACT FOR SOURCE OR DRAIN REGION
Organization Name
Inventor(s)
Tuhin Guha Neogi of Hillsboro OR (US)
Hwichan Jun of Portland OR (US)
Francis Goodwin of Hillsboro OR (US)
ELONGATED CONTACT FOR SOURCE OR DRAIN REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213324 titled 'ELONGATED CONTACT FOR SOURCE OR DRAIN REGION
The abstract of this patent application describes techniques for forming semiconductor devices with elongated contacts of varying heights on source or drain regions. A gate structure surrounds a semiconductor region, with the elongated conductive contact extending laterally across the source/drain trench above an adjacent region without making direct contact.
- Semiconductor devices with elongated contacts of varying heights on source or drain regions
- Gate structure surrounding semiconductor region with elongated conductive contact extending laterally
- Contact does not directly touch adjacent source or drain region
- Conductive via may connect to portion of contact over adjacent region
- First thickness of contact above source or drain region is greater than second thickness above adjacent region
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronic devices
Problems Solved: - Efficient use of space on semiconductor devices - Improved connectivity without short-circuiting adjacent regions
Benefits: - Enhanced performance of semiconductor devices - Increased reliability and longevity - Cost-effective manufacturing process
Commercial Applications: Title: Advanced Semiconductor Devices with Elongated Contacts This technology can be applied in the production of high-performance electronic devices, leading to improved functionality and durability. The market implications include the potential for faster and more efficient semiconductor devices in various industries such as telecommunications, computing, and automotive.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing processes, conductive contacts, and gate structures to gain a deeper understanding of the evolution of this technology.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance and efficiency of semiconductor devices with elongated contacts. Stay updated on the latest advancements in this field to remain at the forefront of innovation.
Questions about Semiconductor Devices with Elongated Contacts: 1. How do these techniques improve the performance of semiconductor devices?
These techniques enhance connectivity and reduce the risk of short-circuiting, leading to more reliable and efficient devices.
2. What are the potential challenges in implementing elongated contacts with varying heights?
The main challenge may be ensuring precise alignment and control during the manufacturing process to achieve the desired contact heights.
Original Abstract Submitted
techniques are provided herein to form semiconductor devices that include an elongated contact having two different heights on a source or drain region. a semiconductor device includes a gate structure around or otherwise on a semiconductor region (or channel region) that extends from a source or drain region. an elongated conductive contact is formed over the source or drain region that stretches or otherwise extends laterally across the source/drain trench above an adjacent source or drain region without contacting the adjacent source or drain region. a conductive via may contact the portion of the conductive contact over the adjacent source or drain region. accordingly, the conductive contact may have a first thickness above the source or drain region and a second thickness above the adjacent source or drain region with the first thickness being greater than the second thickness.
