Intel corporation (20240213154). INTERNAL NODE JUMPER FOR MEMORY BIT CELLS simplified abstract
Contents
INTERNAL NODE JUMPER FOR MEMORY BIT CELLS
Organization Name
Inventor(s)
Smita Shridharan of Beaverton OR (US)
Eric A. Karl of Portland OR (US)
INTERNAL NODE JUMPER FOR MEMORY BIT CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213154 titled 'INTERNAL NODE JUMPER FOR MEMORY BIT CELLS
Simplified Explanation: The patent application describes memory bit cells with internal node jumpers in an integrated circuit structure. These memory bit cells have specific configurations to improve performance and efficiency.
- **Key Features and Innovation:**
- Memory bit cell with first and second gate lines parallel along a second direction of the substrate. - First, second, and third interconnect lines over the gate lines, with one of them acting as an internal node jumper. - Specific pitches and directions of the gate and interconnect lines to optimize the memory bit cell design.
- **Potential Applications:**
- Memory storage devices - Integrated circuits - Semiconductor industry
- **Problems Solved:**
- Improved performance of memory bit cells - Enhanced efficiency in data storage - Optimization of integrated circuit structures
- **Benefits:**
- Higher data storage capacity - Faster data access - Enhanced overall performance of memory systems
- **Commercial Applications:**
- Memory chip manufacturing - Semiconductor companies - Electronics industry suppliers
- **Prior Art:**
- Researchers and engineers in the field of memory cell design - Semiconductor industry publications and patents
- **Frequently Updated Research:**
- Latest advancements in memory cell technology - Innovations in integrated circuit design
Questions about memory bit cells with internal node jumpers:
1. What are the potential implications of using internal node jumpers in memory bit cells?
Internal node jumpers in memory bit cells can improve data storage capacity and access speed, leading to enhanced performance in memory systems.
2. How do the pitches and directions of gate and interconnect lines affect the efficiency of memory bit cells?
The specific configurations of gate and interconnect lines optimize the design of memory bit cells, resulting in improved performance and efficiency.
Original Abstract Submitted
memory bit cells having internal node jumpers are described. in an example, an integrated circuit structure includes a memory bit cell on a substrate. the memory bit cell includes first and second gate lines parallel along a second direction of the substrate. the first and second gate lines have a first pitch along a first direction of the substrate, the first direction perpendicular to the second direction. first, second and third interconnect lines are over the first and second gate lines. the first, second and third interconnect lines are parallel along the second direction of the substrate. the first, second and third interconnect lines have a second pitch along the first direction, where the second pitch is less than the first pitch. one of the first, second and third interconnect lines is an internal node jumper for the memory bit cell.
