Intel corporation (20240213100). METAL GATE CUT WITH HYBRID MATERIAL FILL simplified abstract

METAL GATE CUT WITH HYBRID MATERIAL FILL

Organization Name

intel corporation

Inventor(s)

Swapnadip Ghosh of Hillsboro OR (US)

Yulia Gotlib of Hillsboro OR (US)

Chiao-ti Huang of Portland OR (US)

Bishwajit Debnath of Hillsboro OR (US)

Anupama Bowonder of Portland OR (US)

Matthew J. Prince of Portland OR (US)

METAL GATE CUT WITH HYBRID MATERIAL FILL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213100 titled 'METAL GATE CUT WITH HYBRID MATERIAL FILL

The abstract describes techniques for forming semiconductor devices with gate cuts containing a hybrid material structure, combining low-k and high-k dielectric materials to reduce parasitic capacitance.

• Gate cuts in semiconductor devices have a hybrid structure with both low-k and high-k dielectric materials.
• The hybrid structure consists of an outer layer with high-k dielectric material and a dielectric fill with low-k dielectric material.
• The inclusion of low-k dielectric material helps reduce parasitic capacitance between adjacent conductive layers in the gate cut.
• This technology aims to improve the performance and efficiency of semiconductor devices by optimizing the gate structure.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices such as transistors. - It can enhance the speed and power efficiency of electronic devices by reducing parasitic capacitance.

Problems Solved: - Reducing parasitic capacitance between conductive layers in semiconductor devices. - Improving the overall performance and efficiency of semiconductor devices.

Benefits: - Enhanced performance and efficiency of semiconductor devices. - Improved speed and power efficiency in electronic devices. - Potential cost savings in semiconductor manufacturing processes.

Commercial Applications: Title: "Advanced Semiconductor Devices with Hybrid Gate Cuts" This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries involved in semiconductor manufacturing and research.

Questions about the technology: 1. How does the hybrid gate cut structure improve the performance of semiconductor devices? 2. What are the potential cost savings associated with using this technology in semiconductor manufacturing processes?

Original Abstract Submitted

techniques are provided herein to form semiconductor devices that include one or more gate cuts having a hybrid material structure. a semiconductor device includes a gate structure around or otherwise on a semiconductor region. the gate structure includes a gate dielectric and a gate electrode. the gate structure may be interrupted, for example, between two transistors with a gate cut that includes a hybrid structure having both a low-k dielectric material and a high-k dielectric material. the gate cut includes an outer layer having a high-k dielectric material and a dielectric fill on the dielectric layer having a low-k dielectric material. the inclusion of low-k dielectric material reduces the parasitic capacitance between adjacent conductive layers around or within the gate cut.