Taiwan semiconductor manufacturing company, ltd. (20240203998). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203998 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
The semiconductor device structure described in the abstract consists of two MOSFET devices, each located in different regions of a semiconductor substrate. The first MOSFET device has a bulk semiconductor layer with a gate structure and source/drain regions, while the second MOSFET device has a semiconductor layer with a different height, gate structure, and source/drain regions. An insulator is placed between the substrate and the semiconductor layers, and a spacer layer isolates the two MOSFET devices.
- The structure includes two MOSFET devices with different semiconductor layers and gate structures.
- An insulator separates the substrate from the semiconductor layers.
- A spacer layer isolates the two MOSFET devices.
- The first MOSFET device has a bulk semiconductor layer, while the second MOSFET device has a semiconductor layer.
- Source/drain regions are present in both MOSFET devices.
Potential Applications: - Integrated circuits - Semiconductor devices - Electronics industry
Problems Solved: - Improved performance of MOSFET devices - Enhanced efficiency in semiconductor structures
Benefits: - Higher functionality in semiconductor devices - Increased reliability in integrated circuits - Enhanced performance in electronics applications
Commercial Applications: Title: Advanced Semiconductor Device Structure for Enhanced Performance This technology can be utilized in the development of high-performance integrated circuits for various electronic devices, leading to improved efficiency and reliability in the electronics industry.
Questions about the technology: 1. How does the different heights of the semiconductor layers in the two MOSFET devices impact their performance? 2. What are the specific advantages of using a spacer layer to isolate the MOSFET devices in this structure?
Original Abstract Submitted
a semiconductor device structure includes a first mosfet device disposed at a first region of a semiconductor substrate, the first mosfet device comprises a bulk semiconductor layer contacting the semiconductor substrate, and the bulk semiconductor layer has a first height, a first gate structure over the bulk semiconductor layer, and first s/d regions disposed in the bulk semiconductor layer on opposite sides of the first gate structure; a second mosfet device disposed at a second region of the semiconductor substrate, the second mosfet device comprises a semiconductor layer over the semiconductor substrate, and the semiconductor layer has a second height different than the first height, a second gate structure over the semiconductor layer, and second s/d regions disposed in the semiconductor layer on opposite sides of the second gate structure; an insulator disposed between and in contact with the semiconductor substrate and semiconductor layer; and a spacer layer isolating first and second mosfet devices, and a portion of the spacer layer is disposed between and in contact with the insulator layer and bulk semiconductor layer.
