Lg display co., ltd. (20240204108). Thin Film Transistor, Manufacturing Method Thereof and Display Apparatus Comprising the Same simplified abstract
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Thin Film Transistor, Manufacturing Method Thereof and Display Apparatus Comprising the Same
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Thin Film Transistor, Manufacturing Method Thereof and Display Apparatus Comprising the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204108 titled 'Thin Film Transistor, Manufacturing Method Thereof and Display Apparatus Comprising the Same
Simplified Explanation: The patent application describes a thin film transistor with an active layer and a gate electrode, where the active layer consists of two oxide semiconductor layers - one amorphous and one crystalline.
Key Features and Innovation:
- Thin film transistor with active layer comprising two oxide semiconductor layers
- Gate electrode partially overlapping the active layer
- First oxide semiconductor layer with amorphous structure, second oxide semiconductor layer with crystalline structure
Potential Applications: This technology can be used in display apparatus, such as in screens for electronic devices like smartphones, tablets, and televisions.
Problems Solved: The technology addresses the need for efficient and high-performance transistors in display devices by utilizing a unique combination of oxide semiconductor layers.
Benefits:
- Improved performance and efficiency in display devices
- Enhanced image quality and response time
- Cost-effective manufacturing process
Commercial Applications: The technology can be applied in the consumer electronics industry for the production of high-quality displays, leading to better user experiences and increased market competitiveness.
Prior Art: Readers can explore prior research on thin film transistors, oxide semiconductor layers, and display technologies to understand the evolution of this innovation.
Frequently Updated Research: Stay informed about advancements in oxide semiconductor materials, thin film transistor technology, and display device innovations to keep up with the latest developments in the field.
Questions about Thin Film Transistors: 1. What are the main advantages of using oxide semiconductor layers in thin film transistors? 2. How does the combination of amorphous and crystalline oxide semiconductor layers improve the performance of the transistor?
Original Abstract Submitted
a thin film transistor, and a manufacturing method of the thin film transistor are provided. the thin film transistor comprises an active layer and a gate electrode spaced apart from the active layer and partially overlapping the active layer, wherein the active layer includes a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, wherein the first oxide semiconductor layer has an amorphous structure, the second oxide semiconductor layer has a crystalline structure. in addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.
