Samsung electronics co., ltd. (20240206174). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206174 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation:
This patent application describes a semiconductor device with a unique selection channel structure that includes a selection channel layer and a selection insulating structure.
Key Features and Innovation:
- Gate stack with insulating and conductive patterns
- Memory channel structure penetrating the gate stack
- Selection line structure on the gate stack
- Selection channel structure with a selection channel layer and selection insulating structure
- Selection channel layer with connecting and pillar portions
Potential Applications:
This technology could be applied in the semiconductor industry for memory devices, logic circuits, and other electronic applications requiring efficient selection mechanisms.
Problems Solved:
This technology addresses the need for improved selection mechanisms in semiconductor devices, enhancing their performance and reliability.
Benefits:
The benefits of this technology include enhanced functionality, improved efficiency, and increased reliability in semiconductor devices.
Commercial Applications:
This technology could have commercial applications in the production of advanced memory devices, logic circuits, and other semiconductor products, potentially impacting the electronics market.
Prior Art:
Readers interested in prior art related to this technology could explore patents and research papers in the field of semiconductor device design and fabrication.
Frequently Updated Research:
Researchers in the semiconductor industry may be conducting studies on similar selection channel structures to further enhance the performance of semiconductor devices.
Questions about Semiconductor Device Selection Channel Structure: 1. What are the potential implications of this technology in the semiconductor industry? 2. How does this selection channel structure improve the efficiency of semiconductor devices?
Original Abstract Submitted
a semiconductor device may include a gate stack including insulating and conductive patterns, which are alternately stacked on top of each other, a memory channel structure penetrating the gate stack, a selection line structure on the gate stack, and a selection channel structure penetrating the selection line structure. the selection channel structure may include a selection channel layer, which is electrically connected to the memory channel layer, and a selection insulating structure, which encloses the selection channel layer. the selection channel layer may include a connecting portion on the memory channel structure and a pillar portion on the connecting portion, and an average size of grains in the connecting portion may be less than an average size of grains in the pillar portion.
