Samsung electronics co., ltd. (20240204070). SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS simplified abstract
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SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS
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SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204070 titled 'SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS
Simplified Explanation: The semiconductor device described in the patent application consists of multiple active patterns on a substrate, with a device isolation layer separating them. It also includes a gate electrode that spans across the active patterns and a source/drain pattern on top of them.
Key Features and Innovation:
- Semiconductor device with multiple active patterns and a device isolation layer.
- Gate electrode extending across the active patterns.
- Source/drain pattern with distinct parts on different active patterns.
- Lowermost level of the source/drain pattern is lower than the uppermost level of the device isolation layer.
Potential Applications: This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits and microprocessors.
Problems Solved: The technology addresses the need for efficient device isolation and precise control of source/drain patterns in semiconductor devices.
Benefits:
- Enhanced performance and reliability of semiconductor devices.
- Improved integration of active patterns on a substrate.
- Better control over source/drain patterns for optimized functionality.
Commercial Applications: The technology could have significant commercial applications in the semiconductor industry, leading to the development of more advanced and efficient electronic devices.
Prior Art: Researchers interested in this technology may explore prior art related to semiconductor device fabrication, device isolation techniques, and source/drain pattern control in semiconductor manufacturing processes.
Frequently Updated Research: Researchers may find updated studies on semiconductor device design, fabrication techniques, and materials science relevant to this technology.
Questions about Semiconductor Device Fabrication: 1. How does the device isolation layer contribute to the performance of the semiconductor device? 2. What are the key challenges in controlling source/drain patterns in semiconductor devices?
Original Abstract Submitted
a semiconductor device comprising a plurality of active patterns on a substrate. the semiconductor device may include a device isolation layer defining the plurality of active patterns, a gate electrode extending across the plurality of active patterns, and a source/drain pattern on the active patterns. the plurality of active patterns may comprise a first active pattern and a second active pattern. the source/drain pattern comprises a first part on the first active pattern, a second part on the second active pattern, and a third part extending from the first part and along an upper portion of the first active pattern. the device isolation layer comprises a first outer segment on a sidewall of the first active pattern below the source/drain pattern. a lowermost level of a bottom surface of the third part may be lower than an uppermost level of a top surface of the first outer segment.
