Samsung electronics co., ltd. (20240204054). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Noh Yeong Park of Suwon-si (KR)
Dong Il Bae of Seongnam-si (KR)
Beomjin Park of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204054 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation: The semiconductor device described in the patent application includes a substrate with two regions, each containing active patterns and source/drain patterns. The device also features gate electrodes and support patterns to enhance performance.
- The semiconductor device has a unique structure with two active regions, each with specific patterns for optimal functionality.
- The support pattern between the semiconductor patterns improves the overall performance of the device.
- The gate electrodes on the channel patterns control the flow of current through the device effectively.
- The ratio of the support pattern width to the channel length is critical for the device's performance.
- The device is designed with different channel lengths for specific purposes, enhancing its versatility.
Potential Applications: This technology can be applied in various semiconductor devices, including transistors, integrated circuits, and microprocessors, to improve performance and efficiency.
Problems Solved: This technology addresses the need for enhanced semiconductor device performance, particularly in controlling current flow and optimizing channel lengths for specific applications.
Benefits: The benefits of this technology include improved semiconductor device performance, enhanced efficiency, and versatility in various applications.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced electronic devices for consumer electronics, telecommunications, and computing.
Prior Art: Prior research in semiconductor device fabrication and design may provide insights into similar technologies and advancements in the field.
Frequently Updated Research: Stay updated on the latest research in semiconductor device fabrication, materials science, and nanotechnology to explore new possibilities for enhancing device performance.
Questions about Semiconductor Devices: 1. What are the key factors influencing the performance of semiconductor devices? 2. How does the design of support patterns impact the functionality of semiconductor devices?
Original Abstract Submitted
disclosed are semiconductor devices and/or method of fabricating the same. the semiconductor device comprises a substrate including first and second regions, a first active pattern on the first region and including a pair of first source/drain patterns and a first channel pattern including first semiconductor patterns, a second active pattern on the second region and including a pair of second source/drain patterns and a second channel pattern including second semiconductor patterns, a support pattern between two vertically adjacent first semiconductor patterns, and a first gate electrode and a second gate electrode on the first channel pattern and the second channel pattern. a channel length of the first channel pattern is greater than that of the second channel pattern. a ratio of a width of the support pattern to the channel length of the first channel pattern is in a range of 0.05 to 0.2.
