Samsung electronics co., ltd. (20240204050). SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract
Contents
SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN
Organization Name
Inventor(s)
Jongki Jung of Hwaseong-si (KR)
Myungil Kang of Yongin-si (KR)
SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204050 titled 'SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN
The semiconductor device described in the abstract includes a substrate, two active fins, isolation layers, and a merged source/drain.
- The device features a first active fin with two side surfaces, a second active fin with two side surfaces, and isolation layers between them.
- The first isolation layer is on the first side surface of the first active fin, while the second isolation layer is between the second side surface of the first active fin and the third side surface of the second active fin.
- The third isolation layer is on the fourth side surface of the second active fin, and a merged source/drain is on both active fins.
Potential Applications: - This technology can be used in the development of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - Enhances the integration and performance of semiconductor devices. - Improves the functionality and reliability of electronic components.
Benefits: - Increased efficiency and performance of electronic devices. - Enhanced integration capabilities for semiconductor devices.
Commercial Applications: - This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. - It has potential applications in the automotive industry for advanced driver assistance systems and autonomous vehicles.
Questions about the technology: 1. How does the merged source/drain contribute to the overall functionality of the semiconductor device? 2. What are the specific advantages of using isolation layers in between the active fins for improved performance?
Original Abstract Submitted
a semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.
