Samsung electronics co., ltd. (20240204047). Method for Manufacturing a Semiconductor Device simplified abstract
Contents
Method for Manufacturing a Semiconductor Device
Organization Name
Inventor(s)
Woong Sik Nam of Suwon-si (KR)
Mirco Cantoro of Suwon-si (KR)
Method for Manufacturing a Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204047 titled 'Method for Manufacturing a Semiconductor Device
The semiconductor device described in the abstract consists of various components such as active patterns, gate structures, field insulating film, gate separation structure, and connecting spacer.
- The device includes first and second active patterns separated by a field insulating film.
- It features first and second gate structures with gate electrodes and gate spacers intersecting the active patterns.
- A gate separation structure is present on the field insulating film, comprising a gate separation filling film on a gate separation liner.
- A connecting spacer protrudes from the top surface of the field insulating film, with the gate separation liner contacting it.
- The gate separation liner extends along the top surface and sidewalls of the connecting spacer and the top surface of the field insulating film.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can enhance the performance and efficiency of electronic devices.
Problems Solved: - Improved gate structure design for better functionality and performance. - Enhanced insulation and separation between different components of the semiconductor device.
Benefits: - Increased efficiency and performance of semiconductor devices. - Better control and management of electrical signals within the device.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also find applications in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical devices.
Questions about the technology: 1. How does the gate separation structure contribute to the overall functionality of the semiconductor device? 2. What are the potential implications of using connecting spacers in semiconductor devices?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, particularly in the field of gate structures and insulation materials. Keep an eye on research related to improving the performance and efficiency of electronic devices through innovative design elements.
Original Abstract Submitted
a semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.
