Samsung electronics co., ltd. (20240203944). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE simplified abstract
Contents
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jae Seung Choi of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203944 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a first die with micro bumps and macro metal pads, a routing wiring layer, through silicon vias (TSVs), and keep-out zones.
- The first die has micro bumps on its upper face and macro metal pads corresponding to the micro bumps.
- The routing wiring layer consists of routing metals connected to the macro metal pads and TSVs.
- TSVs connect the routing metals to the micro bumps, extending downward from the routing metals.
- Keep-out zones, including a bundle region, are present to ensure proper functioning of the device.
Potential Applications: - This technology can be used in advanced semiconductor devices for improved connectivity and performance. - It can be applied in high-speed data processing systems and integrated circuits.
Problems Solved: - Enhances the connectivity and efficiency of semiconductor devices. - Ensures reliable signal transmission and reduces signal interference.
Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced signal transmission and reduced interference. - Increased efficiency in data processing systems.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology can be utilized in the development of high-performance computing systems, telecommunications equipment, and consumer electronics.
Prior Art: Readers can explore prior research on semiconductor device packaging, micro bump technology, and TSV integration in semiconductor devices.
Frequently Updated Research: Researchers are continually exploring new methods to enhance the connectivity and performance of semiconductor devices through innovative packaging and interconnect technologies.
Questions about Semiconductor Device Technology: 1. How does this technology improve signal transmission in semiconductor devices? - This technology enhances signal transmission by providing efficient connectivity between micro bumps and macro metal pads.
2. What are the key advantages of using through silicon vias in semiconductor devices? - Through silicon vias offer improved vertical interconnects, enabling better performance and signal transmission in semiconductor devices.
Original Abstract Submitted
a semiconductor device includes a first die including a plurality of first micro bumps on a first upper face of the first die, a plurality of first macro metal pads at positions respectively corresponding to the plurality of first micro bumps, a first routing wiring layer comprising a plurality of first routing metals, where a first end of each of the plurality of first routing metals is respectively under the plurality of first macro metal pads, a plurality of through silicon vias (tsvs), where first ends of the plurality of tsvs are respectively connected to second ends of the plurality of first routing metals, and where each of the plurality of tsvs extends downward from the respective second ends of the plurality of first routing metals, a first plurality of keep-out zones including a first keep-out zone bundle region, and a plurality of first micro metal pads.
