Samsung electronics co., ltd. (20240203882). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THEREOF
Organization Name
Inventor(s)
Jongjin Lee of Clifton Park NY (US)
Jaejik Baek of Watervliet NY (US)
Myunghoon Jung of Clifton NY (US)
Kang-ill Seo of Springfield VA (US)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203882 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THEREOF
Simplified Explanation: The patent application describes a method of manufacturing an integrated circuit device, involving the formation of various structures within the semiconductor device and a unique backside contact structure.
Key Features and Innovation:
- Formation of semiconductor device with source/drain structures and channel structures.
- Creation of a back-end-of-line (BEOL) region.
- Development of a bottle-neck shaped backside contact structure for improved connectivity.
- Backside contact structure with positive slope in one region and no slope in another.
Potential Applications: This technology can be applied in the manufacturing of advanced integrated circuit devices for various electronic applications, such as mobile devices, computers, and IoT devices.
Problems Solved: The method addresses the need for efficient and reliable backside contact structures in semiconductor devices, improving overall performance and connectivity.
Benefits:
- Enhanced connectivity and performance of integrated circuit devices.
- Improved reliability and efficiency in semiconductor manufacturing processes.
Commercial Applications: The technology can be utilized by semiconductor manufacturers to produce high-performance integrated circuit devices for consumer electronics, industrial applications, and telecommunications equipment.
Prior Art: Readers can explore prior art related to backside contact structures in semiconductor devices, as well as advancements in integrated circuit manufacturing processes.
Frequently Updated Research: Stay updated on the latest research and developments in semiconductor manufacturing techniques, particularly in the area of backside contact structures and integrated circuit design.
Questions about Integrated Circuit Device Manufacturing: 1. What are the key components of an integrated circuit device? 2. How does the backside contact structure impact the performance of a semiconductor device?
Original Abstract Submitted
provided is a method of manufacturing an integrated circuit device. the method includes forming a semiconductor device, wherein the semiconductor device has one or more source/drain structures, one or more channel structures and wherein the substrate is on a first side of the semiconductor device. the method also includes forming a back-end-of-line (beol) region and forming a bottle-neck shaped backside contact structure in the substrate and in contact with a first source/drain structure of the semiconductor device, wherein the bottle-neck shaped backside contact structure has a first side contacting the first source/drain structure, a second side contacting a backside power rail, and sidewalls extending from the first source/drain structure to the backside power rail; and wherein the backside contact structure has a first region having a positive slope and a second region, adjacent to the first region, having no slope.
