Samsung electronics co., ltd. (20240203872). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seonghun Lim of Hwaseong-si (KR)

Wookyung You of Hwaseong-si (KR)

Kyoungwoo Lee of Hwaseong-si (KR)

Juyoung Jung of Yongin-si (KR)

Il Sup Kim of Suwon-si (KR)

Chin Kim of Seongnam-si (KR)

Kyoungpil Park of Yongin-si (KR)

Jinhyung Park of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203872 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the patent application includes a transistor on a substrate, an interlayer insulating layer, a first metal-containing layer, and a second metal-containing layer with a resistor.

• The device features a transistor on a substrate.
• An interlayer insulating layer is present on the transistor.
• A first metal-containing layer is located on the interlayer insulating layer.
• A second metal-containing layer on top of the first layer includes a resistor.
• The resistor consists of a first insulating layer, a resistor metal layer, and a second insulating layer.
• The resistor metal layer has a recessed side surface.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It may find applications in the electronics industry for improved circuit design.

Problems Solved: - Enhances the functionality and performance of semiconductor devices. - Allows for more efficient integration of resistors in circuits.

Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced circuit design capabilities. - Potential for miniaturization and increased functionality.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Circuit Design This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality in various consumer electronics and industrial applications.

Questions about the technology: 1. How does the presence of the resistor in the second metal-containing layer impact the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production processes?

Original Abstract Submitted

a semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer, and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.