Samsung electronics co., ltd. (20240203701). SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract
Contents
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Organization Name
Inventor(s)
Chanyeong Jeong of Suwon-si (KR)
Jeongmin Bang of Suwon-si (KR)
Yeongkwang Lee of Suwon-si (KR)
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203701 titled 'SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The abstract describes a substrate processing apparatus with a chamber, a substrate support, a plasma source, an ion blocker, and a temperature controller.
- The substrate processing apparatus has a chamber with two spaces, a substrate support in one space, and a plasma source in the other space.
- An ion blocker is positioned between the two spaces to allow radicals from the plasma to pass through to the substrate.
- The temperature controller includes heaters connected to the ion blocker and chillers, controlled to regulate the temperature.
- The ion blocker is divided into regions, each with a heating line and boundary regions.
Potential Applications: This technology can be used in semiconductor manufacturing, thin film deposition, and surface modification processes.
Problems Solved: The apparatus addresses the need for precise control of radical delivery to the substrate during plasma processing.
Benefits: Improved substrate processing efficiency, enhanced film quality, and increased control over plasma parameters.
Commercial Applications: This technology could be valuable in the semiconductor industry, research laboratories, and other high-tech manufacturing sectors.
Questions about the technology: 1. How does the ion blocker regulate the flow of radicals to the substrate? 2. What advantages does the temperature controller provide in substrate processing?
Original Abstract Submitted
a substrate processing apparatus includes a chamber including a first space and a second space, a substrate support in the first space and configured to support a substrate, a plasma source configured to generate plasma in the second space, an ion blocker between the second space and the first space, the ion blocker including through-holes configured to pass therethrough radicals of the plasma from the second space to the first space and provide the radicals to the substrate, and a temperature controller including a plurality of heaters connected to the ion blocker, one or more chillers, and a controller configured to control output of the plurality of heaters and output of the one or more chillers, where the ion blocker includes a plurality of regions, each of the plurality of regions including a heating line, one or more boundary regions.
