Samsung electronics co., ltd. (20240203509). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
Contents
MEMORY DEVICE AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Yonghyuk Choi of Suwon-si (KR)
Seungyong Choi of Suwon-si (KR)
MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203509 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
The memory device described in the abstract includes a memory cell array with different cell blocks for storing various types of information.
- The memory cell array consists of a first cell block for storing information other than user data and a second cell block for storing user data.
- Each cell block contains multiple cell strings and control circuitry to manage write and read operations.
- The first cell block includes a first ground select line (gsl) region with stacked gsls programmed to different threshold voltages.
- The first gsl region also has a line at the same height as the word line connected to memory cells storing user data in the second cell block.
Potential Applications: - Data storage devices - Embedded systems - Consumer electronics
Problems Solved: - Efficient organization of different types of information in a memory device - Improved control over write and read operations - Enhanced data security through separate storage areas
Benefits: - Better data management and organization - Increased data security and reliability - Enhanced performance and efficiency in memory operations
Commercial Applications: Title: Advanced Memory Device for Enhanced Data Management This technology can be utilized in various commercial applications such as: - Solid-state drives - Smartphones and tablets - Wearable devices
Prior Art: Researchers can explore prior art related to memory cell arrays, data storage devices, and semiconductor memory technologies to understand the evolution of similar innovations.
Frequently Updated Research: Researchers can stay updated on advancements in memory cell array technology, semiconductor memory design, and data storage solutions to enhance their understanding of the field.
Questions about Memory Cell Array Technology: 1. How does the programming of ground select transistors impact the performance of the memory device? 2. What are the key differences between the first and second cell blocks in terms of data storage and management?
Original Abstract Submitted
a memory device comprises: a memory cell array including a plurality of cell blocks including a first cell block storing information other than user data and a second cell block storing the user data, wherein each of the plurality of cell blocks includes a plurality of cell strings and control circuitry configured to control a write operation and a read operation of the memory cell array. a first ground select line (gsl) region included in the first cell block includes a plurality of gsls stacked in a vertical direction. one or more ground select transistors of a plurality of ground select transistors connected to each of the gsls are programmed to a first threshold voltage and the other ground select transistors of the plurality of ground select transistors not connected to the gsls are programmed to a second threshold voltage that is higher than the first threshold voltage. a first line included in the first gsl region in the first cell block is arranged at a same height as a word line connected to memory cells storing the user data in the second cell block.
