Samsung electronics co., ltd. (20240203499). NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES simplified abstract
Contents
NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES
Organization Name
Inventor(s)
Junehong Park of Suwon-si (KR)
NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203499 titled 'NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES
Simplified Explanation: The method described in the patent involves operating a nonvolatile memory device with a voltage generator by adjusting reference voltage levels based on the voltage difference between two word line nodes.
- The method calculates the voltage difference between two word line nodes.
- It changes the reference voltage level of the voltage generator based on this difference.
- The target voltage level is determined based on the adjusted reference voltage levels.
- The first word line node's proximity to the output terminal of the voltage generator is considered in the process.
Key Features and Innovation:
- Voltage generator operation in a nonvolatile memory device.
- Adjustment of reference voltage levels based on voltage differences between word line nodes.
- Proximity of word line nodes to the output terminal of the voltage generator considered in the process.
Potential Applications: The technology can be applied in various nonvolatile memory devices to optimize voltage levels for improved performance and reliability.
Problems Solved: The method addresses the challenge of efficiently managing voltage levels in nonvolatile memory devices to enhance their functionality.
Benefits:
- Enhanced performance and reliability of nonvolatile memory devices.
- Efficient voltage management for optimized operation.
Commercial Applications: The technology can be utilized in the development of advanced nonvolatile memory devices for various industries, including electronics and data storage.
Prior Art: Readers can explore prior research on voltage management in nonvolatile memory devices to understand the evolution of this technology.
Frequently Updated Research: Researchers may be conducting studies on further optimizing voltage management in nonvolatile memory devices for enhanced performance.
Questions about Nonvolatile Memory Device Voltage Management: 1. How does the method described in the patent improve voltage management in nonvolatile memory devices? 2. What are the potential implications of adjusting reference voltage levels based on word line node proximity in nonvolatile memory devices?
Original Abstract Submitted
provided is a method of operating a nonvolatile memory device including a voltage generator, the method including calculating a difference between a voltage level of a first word line node and a voltage level of a second word line node, changing a first reference voltage level of the voltage generator to a second reference voltage level based on the difference between the voltage levels, and determining a target voltage level based on any one of the first reference voltage level and the second reference voltage level. the first word line node may be closer from an output terminal of the voltage generator than the second word line node.
