Samsung electronics co., ltd. (20240203478). NONVOLATILE MEMORY DEVICE FOR PERFORMING MULTI-PLANE READ OPERATION AND OPERATION METHOD THEREOF simplified abstract

From WikiPatents
Revision as of 18:39, 20 June 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

NONVOLATILE MEMORY DEVICE FOR PERFORMING MULTI-PLANE READ OPERATION AND OPERATION METHOD THEREOF

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yeji Shin of Suwon-si (KR)

Seokin Hong of Suwon-si (KR)

NONVOLATILE MEMORY DEVICE FOR PERFORMING MULTI-PLANE READ OPERATION AND OPERATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203478 titled 'NONVOLATILE MEMORY DEVICE FOR PERFORMING MULTI-PLANE READ OPERATION AND OPERATION METHOD THEREOF

The patent application describes a nonvolatile memory device with a cell array divided into multiple planes, a voltage generator for word line voltages, a row decoder for address-based voltage transmission, and a control circuit for setting up word line voltages in response to an activated pseudo plane independent read mode setting.

  • The device includes a cell array divided into multiple planes.
  • A voltage generator produces word line voltages for each plane.
  • A row decoder transmits the word line voltages based on addresses.
  • A control circuit adjusts word line voltages in response to a specific mode setting.
  • The control circuit sequentially shifts voltage setup times based on the number of planes.

Potential Applications: - Data storage devices - Embedded systems - Consumer electronics

Problems Solved: - Efficient memory access - Improved data retrieval speed - Enhanced memory management

Benefits: - Faster data processing - Increased memory efficiency - Better overall system performance

Commercial Applications: Title: "Advanced Nonvolatile Memory Devices for Enhanced Data Storage" This technology can be used in various commercial applications such as solid-state drives, smart devices, and industrial automation systems. The market implications include improved data storage capabilities, faster data access speeds, and enhanced reliability for critical systems.

Prior Art: Readers can explore prior art related to nonvolatile memory devices, voltage generators, and memory management systems to understand the evolution of this technology.

Frequently Updated Research: Researchers are constantly exploring ways to optimize memory access, improve data storage efficiency, and enhance overall system performance using advanced nonvolatile memory devices.

Questions about Nonvolatile Memory Devices: 1. How do nonvolatile memory devices differ from volatile memory devices, and what are the advantages of using nonvolatile memory? Nonvolatile memory devices retain data even when power is turned off, unlike volatile memory which loses data. The main advantage of nonvolatile memory is data persistence.

2. What are the key factors to consider when designing nonvolatile memory devices for optimal performance and reliability? Design considerations for nonvolatile memory devices include data retention, endurance, speed, and power consumption.


Original Abstract Submitted

a nonvolatile memory device includes a cell array divided into a plurality of planes, a voltage generator configured to generate a word line voltage applied to word lines of each of the plurality of planes, a row decoder configured to transmit the word line voltage to the cell array in response to an address, and a control circuit configured to set up voltages of word lines of each of the plurality of planes to the word line voltage in response to an activated pseudo plane independent read mode setting. the control circuit is configured to sequentially shift voltage setup times of the word lines by a specified time delay corresponding to a number of the plurality of planes.