Intel corporation (20240204091). LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES simplified abstract

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES

Organization Name

intel corporation

Inventor(s)

Heli Vora of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Pratik Koirala of Portland OR (US)

Han Wui Then of Portland OR (US)

Michael Beumer of Portland OR (US)

Ahmad Zubair of Hillsboro OR (US)

Samuel Bader of Hillsboro OR (US)

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204091 titled 'LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES

The patent application describes devices, transistor structures, systems, and techniques related to low aluminum concentration aluminum gallium nitride interlayers for group III-nitride enhancement mode transistors. The low aluminum concentration aluminum gallium nitride interlayer has a lower aluminum concentration than the polarization layer of the transistor, allowing the polarization layer to induce a two-dimensional electron gas in a semiconductor layer of the transistor. The interlayer can be used as an etch stop layer, a gate liner, or both.

• The patent introduces low aluminum concentration aluminum gallium nitride interlayers for group III-nitride enhancement mode transistors.
• These interlayers have a lower aluminum concentration than the polarization layer, enabling the induction of a two-dimensional electron gas in the semiconductor layer.
• The interlayer can serve as an etch stop layer, a gate liner, or both, enhancing the performance of the transistor.

Potential Applications: - High-frequency communication systems - Power amplifiers - Radar systems

Problems Solved: - Improving the performance of group III-nitride enhancement mode transistors - Enhancing the efficiency of semiconductor devices

Benefits: - Increased transistor performance - Enhanced electron gas induction - Improved overall device efficiency

Commercial Applications: Title: "Advanced Transistor Technology for High-Frequency Communication Systems" This technology can be utilized in the development of high-performance communication systems, power amplifiers, and radar systems, catering to the growing demand for efficient semiconductor devices in various industries.

Prior Art: Research on aluminum gallium nitride interlayers in semiconductor devices and transistors.

Frequently Updated Research: Ongoing studies on the optimization of aluminum gallium nitride interlayers for enhanced transistor performance.

Questions about Low Aluminum Concentration Aluminum Gallium Nitride Interlayers: 1. How does the low aluminum concentration in the interlayer impact the performance of the transistor? 2. What are the potential challenges in implementing these interlayers in semiconductor devices?

Original Abstract Submitted

devices, transistor structures, systems, and techniques are described herein related to low aluminum concentration aluminum gallium nitride interlayers for group iii-nitride enhancement mode transistors. the low aluminum concentration aluminum gallium nitride interlayer includes a lower aluminum concentration than a polarization layer of the transistor, such that the polarization layer induces a two-dimensional electron gas in a semiconductor layer of the transistor. the low aluminum concentration aluminum gallium nitride interlayer may be implemented as an etch stop layer, as a gate liner, or both.