18128490. MIM FLUX CAPACITOR WITH THIN AND THICK METAL LEVELS simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
MIM FLUX CAPACITOR WITH THIN AND THICK METAL LEVELS
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Kumar Anurag Shrivastava of Bangalore (IN)
Viresh Chinchansure of Bangalore (IN)
MIM FLUX CAPACITOR WITH THIN AND THICK METAL LEVELS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18128490 titled 'MIM FLUX CAPACITOR WITH THIN AND THICK METAL LEVELS
The integrated circuit described in the patent application consists of multiple metal levels over a semiconductor substrate, with capacitor electrodes in the first and second metal levels.
- The first capacitor electrode in the first metal level has a plurality of first lines.
- The second capacitor electrode in the first metal level includes a plurality of second lines alternating with the first metal lines.
- The third capacitor electrode in the second metal level has a plurality of third lines.
- The fourth capacitor electrode in the second metal level includes a plurality of fourth parallel lines alternating with the third metal lines.
Potential Applications: - This technology could be used in the development of advanced integrated circuits for various electronic devices. - It may find applications in the semiconductor industry for improving the performance of electronic components.
Problems Solved: - This innovation addresses the need for efficient and compact capacitor structures in integrated circuits. - It helps in enhancing the functionality and performance of semiconductor devices.
Benefits: - Improved efficiency and performance of integrated circuits. - Enhanced capabilities for electronic devices. - Compact and reliable capacitor structures for semiconductor applications.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology could be commercially utilized in the production of high-performance electronic devices such as smartphones, tablets, and computers. It could also be valuable in the development of advanced sensors and communication systems.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor device manufacturing, specifically focusing on capacitor structures in integrated circuits.
Frequently Updated Research: Researchers and industry professionals may find it beneficial to stay updated on advancements in semiconductor manufacturing techniques, particularly those related to capacitor design and integration in integrated circuits.
Questions about Integrated Circuit Technology: 1. How does this technology improve the efficiency of integrated circuits? 2. What are the potential challenges in implementing this innovation in semiconductor devices?
Original Abstract Submitted
An integrated circuit includes first second metal levels over a semiconductor substrate. A first capacitor electrode in the first metal level has a plurality of first lines. A second capacitor electrode in the first metal level includes a plurality of second lines alternating with the plurality of first metal lines. A third capacitor electrode in the second metal level includes a plurality of third lines. And a fourth capacitor electrode in the second metal level includes a plurality of fourth parallel lines alternating with the plurality of third metal lines. Each of the third lines is located over a first one of the first lines and a first one of the second lines, and each of the fourth lines is located over a second one of the first lines and a second one of the second lines.
