18438564. SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18438564 titled 'SEMICONDUCTOR DEVICE
The purpose of the invention is to create a display device with a stable thin film transistor (TFT) of an oxide semiconductor by minimizing the impact of mask alignment variations.
- The width of the oxide semiconductor in the channel width direction is wider than the width of the gate electrode in the same direction.
Potential Applications: - This technology can be applied in the manufacturing of high-quality display devices such as LCD screens and OLED panels.
Problems Solved: - Minimizes the influence of mask alignment variations, ensuring consistent TFT performance in display devices.
Benefits: - Improved stability and reliability of TFTs in oxide semiconductor-based display devices. - Enhanced overall display quality and longevity.
Commercial Applications: Title: Advanced Display Technology for Enhanced Performance This technology can be utilized in the production of smartphones, tablets, TVs, and computer monitors to enhance display quality and performance, leading to increased consumer satisfaction and market competitiveness.
Prior Art: Researchers can explore prior patents related to oxide semiconductor TFTs and display device manufacturing processes to gain insights into the evolution of this technology.
Frequently Updated Research: Researchers and industry professionals can stay updated on advancements in oxide semiconductor TFT technology and display device manufacturing processes through academic journals, conferences, and industry publications.
Questions about Oxide Semiconductor TFT Technology: 1. What are the key advantages of using oxide semiconductors in TFT technology? - Oxide semiconductors offer high electron mobility, low off-state current, and excellent transparency, making them ideal for display applications. 2. How does the width of the oxide semiconductor in the channel width direction affect TFT performance? - A wider oxide semiconductor width helps to minimize the impact of mask alignment variations, leading to more stable and reliable TFT operation.
Original Abstract Submitted
The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.
