18337307. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Mi Seong Park of Icheon-si Gyeonggi-do (KR)

In Su Park of Icheon-si Gyeonggi-do (KR)

Jung Shik Jang of Icheon-si Gyeonggi-do (KR)

Seok Min Jeon of Icheon-si Gyeonggi-do (KR)

Won Geun Choi of Icheon-si Gyeonggi-do (KR)

Jung Dal Choi of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18337307 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The patent application describes a semiconductor memory device with a unique structure involving conductive layers and channel patterns in an elliptical opening.

• The semiconductor memory device has a stack of conductive layers stacked in a specific direction.
• There is an elliptical opening in the stack with two channel patterns extending in different directions.
• The channel patterns overlap with the major axis of the elliptical shape and have bent portions.

Key Features and Innovation

• Unique elliptical opening design in the stack of conductive layers.
• Two channel patterns extending in different directions within the opening.
• Central portions of the channel patterns overlap with the major axis of the elliptical shape.

Potential Applications

The technology can be used in various semiconductor memory devices, improving their performance and efficiency.

Problems Solved

• Enhanced data storage capacity.
• Improved data transfer speeds.
• Better overall performance of semiconductor memory devices.

Benefits

• Increased memory capacity.
• Faster data transfer rates.
• Enhanced functionality of semiconductor memory devices.

Commercial Applications

• This technology can be applied in the manufacturing of high-performance computer systems, mobile devices, and other electronic devices requiring efficient memory storage.

Prior Art

Readers can explore prior patents related to semiconductor memory devices with unique channel patterns and openings to understand the evolution of this technology.

Frequently Updated Research

Stay updated on the latest advancements in semiconductor memory devices and related technologies to leverage the full potential of this innovation.

Questions about Semiconductor Memory Devices

What are the key advantages of using an elliptical opening in the stack of conductive layers?

The elliptical opening allows for a more efficient layout of channel patterns, optimizing data flow and storage capacity.

How does the unique design of the channel patterns contribute to the overall performance of the semiconductor memory device?

The channel patterns, with their specific layout and overlapping central portions, enhance data transfer speeds and storage efficiency in the device.

Original Abstract Submitted

The present disclosure includes a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a stack including a plurality of conductive layers stacked to be spaced apart in a first direction, an opening in the stack extending in the first direction and having an elliptical shape in a plan view, and a first channel pattern and a second channel pattern spaced apart from each other in a second direction toward which a major axis of the elliptical shape faces in the opening, the first channel pattern and the second channel pattern extending in the first direction. Each of the first channel pattern and the second channel pattern includes a central portion overlapping with the major axis of the elliptical shape and bent portions extending away from the central portion.