18319260. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Chul Young Kim of Icheon-si Gyeonggi-do (KR)
Ji Yeon Baek of Icheon-si Gyeonggi-do (KR)
Kyung Sung Yun of Icheon-si Gyeonggi-do (KR)
Kyung Jin Lee of Icheon-si Gyeonggi-do (KR)
Sul Gi Jung of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18319260 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a first gate structure with a cell region and a contact region, a channel structure in the cell region, and a supporter in the contact region.
- The device features a first gate structure with distinct regions for different functions.
- A channel structure is integrated into the cell region of the first gate structure.
- A supporter is positioned in the contact region of the first gate structure to provide structural support.
Potential Applications: - This technology could be utilized in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits and microprocessors.
Problems Solved: - The design addresses the need for improved structural support within semiconductor devices. - It enhances the overall performance and reliability of the device by optimizing the distribution of components.
Benefits: - Enhanced structural integrity and stability of the semiconductor device. - Improved efficiency and functionality of the device due to optimized design features.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could have significant commercial applications in the semiconductor industry, particularly in the production of high-performance electronic devices. It may attract interest from semiconductor manufacturers looking to enhance the quality and reliability of their products.
Prior Art: Readers interested in exploring prior art related to this technology may refer to patents and research papers focusing on semiconductor device design, structural support mechanisms, and channel structures in semiconductor devices.
Frequently Updated Research: Researchers and industry professionals may find value in staying updated on advancements in semiconductor device design, structural support technologies, and innovations in channel structures for improved device performance.
Questions about Semiconductor Device Technology: 1. What are the key advantages of integrating a supporter in the contact region of the first gate structure? Supporters in the contact region provide enhanced structural support, contributing to the overall stability and reliability of the semiconductor device.
2. How does the channel structure in the cell region impact the performance of the semiconductor device? The channel structure plays a crucial role in facilitating the flow of electrical signals within the device, optimizing its functionality and efficiency.
Original Abstract Submitted
A semiconductor device includes: a first gate structure including a cell region and a contact region; a channel structure located in the cell region of the first gate structure; and a supporter located in the contact region of the first gate structure.
