18331821. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Eun Seok Choi of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18331821 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application consists of a source bonding structure with two layers, a first memory cell array connected to the first source layer, and a second memory cell array connected to the second source layer. The source bonding structure includes either a semiconductor bonding area or a metal bonding area.
- The patent application introduces a unique source bonding structure for a semiconductor memory device.
- The device features two memory cell arrays connected to different layers of the source bonding structure.
- The source bonding structure includes a semiconductor bonding area or a metal bonding area.
Potential Applications: - This technology can be applied in various semiconductor memory devices for improved performance and efficiency.
Problems Solved: - Enhances the connectivity and functionality of semiconductor memory devices. - Provides a more efficient source bonding structure for memory cell arrays.
Benefits: - Improved performance and connectivity in semiconductor memory devices. - Enhanced efficiency and functionality of memory cell arrays.
Commercial Applications: Title: Innovative Source Bonding Structure for Semiconductor Memory Devices This technology can be utilized in the production of high-performance memory devices for consumer electronics, data storage systems, and industrial applications. The improved source bonding structure can lead to more reliable and efficient memory devices, catering to a wide range of commercial needs.
Questions about Source Bonding Structure for Semiconductor Memory Devices: 1. How does the source bonding structure impact the overall performance of semiconductor memory devices? 2. What are the key differences between a semiconductor bonding area and a metal bonding area in the source bonding structure?
Original Abstract Submitted
A semiconductor memory device includes a source bonding structure including a first source layer and a second source layer bonded to each other, a first memory cell array structure connected to the first source layer of the source bonding structure, and a second memory cell array structure connected to the second source layer of the source bonding structure. The source bonding structure includes at least one of a semiconductor bonding area and a metal bonding area.
