Micron technology, inc. (20240194264). MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION simplified abstract
Contents
- 1 MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Cell Technology
- 1.13 Original Abstract Submitted
MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION
Organization Name
Inventor(s)
Dmitry Mikulik of Meridian ID (US)
Ramanathan Gandhi of Singapore (SG)
MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194264 titled 'MEMORY CELLS AND MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION
Simplified Explanation
The patent application describes memory cells and memory array structures with specific components like control gates, charge-storage nodes, charge-blocking materials, and high-k dielectrics.
- These memory cells have a complex structure with multiple layers of dielectric materials to enhance performance and reliability.
Key Features and Innovation
- Memory cells with a control gate, channel, gate dielectric, charge-storage node, charge-blocking material, laminated dielectric, and high-k dielectric.
- Laminated dielectric includes a first dielectric material with higher oxygen areal density than a second dielectric material.
- Complex structure designed to improve memory cell functionality and longevity.
Potential Applications
The technology can be used in various memory devices such as flash drives, solid-state drives, and other data storage systems.
Problems Solved
- Enhances memory cell performance and reliability.
- Improves data retention and retrieval in memory arrays.
Benefits
- Increased efficiency and speed in data storage.
- Enhanced durability and longevity of memory cells.
- Improved overall performance of memory array structures.
Commercial Applications
- Data storage industry for consumer electronics, servers, and cloud computing.
- Semiconductor manufacturing companies for memory chip production.
Prior Art
Readers can explore prior patents related to memory cell structures, dielectric materials, and memory array designs to understand the evolution of this technology.
Frequently Updated Research
Stay updated on advancements in memory cell technology, dielectric materials, and memory array structures to leverage the latest innovations in the field.
Questions about Memory Cell Technology
What are the key components of a memory cell structure?
A memory cell structure typically includes a control gate, channel, charge-storage node, charge-blocking material, and various dielectric layers to facilitate data storage and retrieval.
How does the use of high-k dielectrics impact memory cell performance?
High-k dielectrics in memory cells help improve charge retention, reduce leakage currents, and enhance overall efficiency in data storage operations.
Original Abstract Submitted
memory cells, and memories and memory array structures containing such memory cells, might include a control gate, a channel, a gate dielectric between the channel and the control gate, a charge-storage node between the gate dielectric and the control gate, a charge-blocking material between the charge-storage node and the control gate, a laminated dielectric between the charge-blocking material and the control gate, and a high-k dielectric between the laminated dielectric and the control gate, wherein the laminated dielectric comprises an instance of a first dielectric material between the charge-blocking material and the high-k dielectric and an instance of a second dielectric material between the instance of the first dielectric material and the high-k dielectric, and wherein the instance of the first dielectric material has a higher oxygen areal density than an oxygen areal density of the instance of the second dielectric material.
