US Patent Application 18347985. Memory Device and Method for Forming Thereof simplified abstract

Memory Device and Method for Forming Thereof

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chih-Chuan Yang of Hsinchu (TW)

Memory Device and Method for Forming Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 18347985 titled 'Memory Device and Method for Forming Thereof

Simplified Explanation

The patent application describes a semiconductor device that includes a memory cell and a dummy region.

• The memory cell consists of a transistor.
• The dummy region contains a cut-off transistor.
• The first terminal of the cut-off transistor is connected to the second terminal of the memory cell transistor.
• The third terminal of the cut-off transistor is connected to ground.

The innovation in this patent application is:

• The inclusion of a dummy region adjacent to the memory cell in a semiconductor device.
• The use of a cut-off transistor in the dummy region.
• The electrical coupling of the first terminal of the cut-off transistor to the second terminal of the memory cell transistor.
• The electrical coupling of the third terminal of the cut-off transistor to ground.

Original Abstract Submitted

A semiconductor device includes a first memory cell and a dummy region adjacent to the first memory cell. The first memory cell includes a first transistor. The dummy region includes a cut-off transistor. The cut-off transistor has a first terminal electrically coupled to a second terminal of the first transistor. The cut-off transistor has a third terminal electrically coupled to ground.