Samsung electronics co., ltd. (20240196617). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME
Organization Name
Inventor(s)
Bonghyun Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196617 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME
The semiconductor device described in the abstract includes various layers and structures on a substrate, with a focus on the scribe lane region and key pattern regions. The device features a complex arrangement of insulating layers, barrier metal layers, and pattern structures that allow for efficient operation and integration within electronic systems.
- The device includes a substrate with distinct regions for chip and scribe lane functions.
- Multiple insulating layers and metal barriers are utilized to protect and enhance the performance of the device.
- The pattern structures are designed to overlap and penetrate various layers, optimizing the device's functionality.
- The key pattern regions play a crucial role in the overall operation and integration of the semiconductor device.
Potential Applications: This technology can be applied in various electronic devices such as microprocessors, memory chips, and integrated circuits where precise and efficient operation is essential.
Problems Solved: This technology addresses the challenges of integrating multiple layers and structures in a semiconductor device while maintaining performance and reliability.
Benefits: The benefits of this technology include improved efficiency, reliability, and performance of semiconductor devices, leading to enhanced functionality in electronic systems.
Commercial Applications: This technology has potential commercial applications in the semiconductor industry, particularly in the development of advanced electronic devices for various applications.
Prior Art: Researchers can explore prior art related to semiconductor device fabrication processes, insulating layer technologies, and barrier metal layer applications to gain a deeper understanding of this technology.
Frequently Updated Research: Researchers are continually exploring new materials and processes to enhance the performance and efficiency of semiconductor devices, which may impact the development of similar technologies in the future.
Questions about the Semiconductor Device: 1. How does the arrangement of insulating layers and metal barriers contribute to the overall performance of the semiconductor device? 2. What are the key considerations in designing pattern structures for optimal functionality in semiconductor devices?
Original Abstract Submitted
a semiconductor device includes a substrate comprising a chip region and a scribe lane region including a first key pattern region, a capping insulating layer disposed on the scribe lane region, a barrier metal layer covering the capping insulating layer and an inner wall of a via hole penetrating the capping insulating layer, a substrate layer disposed on the barrier metal layer and filling the via hole, an insulating plate and an upper base layer disposed on the substrate layer, a pattern insulating layer disposed on the capping insulating layer in the first key pattern region, a stacked structure disposed on the upper base layer and the pattern insulating layer, and first pattern structures overlapping the pattern insulating layer in a vertical direction and penetrating the stacked structure and the pattern insulating layer, wherein the pattern insulating layer extends through the barrier metal layer in the first key pattern region.
