US Patent Application 18352556. MATERIALS AND METHODS FOR FORMING RESIST BOTTOM LAYER simplified abstract
Contents
MATERIALS AND METHODS FOR FORMING RESIST BOTTOM LAYER
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Jing Hong Huang of Kaohsiung City (TW)
Chien-Wei Wang of Hsinchu County (TW)
Shang-Wern Chang of Hsinchu County (TW)
Ching-Yu Chang of Yilang County (TW)
MATERIALS AND METHODS FOR FORMING RESIST BOTTOM LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18352556 titled 'MATERIALS AND METHODS FOR FORMING RESIST BOTTOM LAYER
Simplified Explanation
The patent application describes a method for forming a bottom layer on a semiconductor substrate using a polymer and two different cross-linkers.
- The first cross-linker is activated by ultraviolet (UV) radiation, while the second cross-linker is activated by heat at a specific temperature.
- The bottom layer is exposed to a UV source to activate the first cross-linker, resulting in an exposed bottom layer.
- The exposed bottom layer is then baked to activate the second cross-linker.
- This method allows for precise control over the cross-linking process, ensuring the bottom layer is properly formed.
Original Abstract Submitted
A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.
