18397059. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
Contents
- 1 Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Memory Array Formation Method for Electronic Devices
- 1.12 Original Abstract Submitted
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
John D. Hopkins of Meridian ID (US)
Darwin A. Clampitt of Wilder ID (US)
Michael J. Puett of Boise ID (US)
Christopher R. Ritchie of Boise ID (US)
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 18397059 titled 'Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
Simplified Explanation
The patent application describes a method for forming a memory array with strings of memory cells by creating a stack of alternating tiers. Channel-material strings are placed in channel openings in the tiers, with conductor-material contacts directly against the channel material. The contacts are vertically recessed in the openings, and conductive vias are formed against the recessed contacts.
- Formation of memory array with strings of memory cells
- Stack of alternating tiers for organization
- Channel-material strings in channel openings
- Conductor-material contacts against channel material
- Vertically recessed contacts in openings
- Formation of conductive vias against recessed contacts
Potential Applications
This technology can be applied in the manufacturing of memory arrays for various electronic devices such as smartphones, computers, and servers. It can also be used in data storage systems and other memory-intensive applications.
Problems Solved
This method addresses the need for efficient organization and connection of memory cells in a memory array. It provides a structured approach to forming memory arrays with improved performance and reliability.
Benefits
- Enhanced organization of memory cells - Improved performance of memory arrays - Increased reliability of memory storage - Efficient use of space in memory arrays
Commercial Applications
- Title: Memory Array Formation Method for Electronic Devices*
This technology can be commercially utilized in the production of electronic devices requiring high-speed and reliable memory storage, such as smartphones, tablets, laptops, and servers. It can also benefit companies involved in data storage solutions and memory chip manufacturing.
Prior Art
Information on prior art related to this technology is not provided in the abstract.
Frequently Updated Research
There is no information available on frequently updated research relevant to this technology.
Questions about Memory Array Formation Method for Electronic Devices
Question 1
How does this method improve the performance of memory arrays compared to traditional methods?
Answer 1
This method enhances the performance of memory arrays by providing a structured approach to organizing memory cells, which leads to improved efficiency and reliability in data storage.
Question 2
What are the potential cost implications of implementing this technology in memory array production?
Answer 2
The cost implications of implementing this technology would depend on factors such as the scale of production, materials used, and manufacturing processes. However, the benefits of improved performance and reliability may outweigh the initial investment in the long run.
Original Abstract Submitted
A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. A channel-material string is in individual channel openings in the vertically-alternating first tiers and second tiers. A conductor-material contact is in the individual channel openings directly against the channel material of individual of the channel-material strings. The conductor-material contacts are vertically recessed in the individual channel openings. A conductive via is formed in the individual channel openings directly against the vertically-recessed conductor-material contact in that individual channel opening. Other aspects, including structure independent of method, are disclosed.
