18438894. METHOD FOR FABRICATING THE SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)

METHOD FOR FABRICATING THE SEMICONDUCTOR MEMORY DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Yu Jeong Lee of Icheon-si Gyeonggi-do (KR)

Dae Hwan Yun of Icheon-si Gyeonggi-do (KR)

Gil Bok Choi of Icheon-si Gyeonggi-do (KR)

METHOD FOR FABRICATING THE SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18438894 titled 'METHOD FOR FABRICATING THE SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The patent application describes a method for creating a semiconductor memory device by forming a stacked body on a source layer, creating channel holes through the stacked body, forming a channel layer, and adding a channel passivation layer to reduce the thickness of the channel layer.

• Stacked body formed by stacking dielectric and sacrificial layers
• Channel holes created through the stacked body
• Channel layer formed in the holes with regions in the stacked body and source layer
• Channel passivation layer added to reduce thickness of the channel layer

Key Features and Innovation

• Formation of a stacked body using dielectric and sacrificial layers
• Creation of channel holes through the stacked body
• Formation of a channel layer with regions in the stacked body and source layer
• Addition of a channel passivation layer to reduce the thickness of the channel layer

Potential Applications

This technology can be applied in the manufacturing of semiconductor memory devices for various electronic devices such as computers, smartphones, and tablets.

Problems Solved

This method addresses the need for a more efficient and precise way to fabricate semiconductor memory devices with improved performance and reduced thickness of the channel layer.

Benefits

• Enhanced performance of semiconductor memory devices
• Reduction in the thickness of the channel layer
• Improved efficiency in fabrication processes

Commercial Applications

• Semiconductor industry for memory device manufacturing
• Electronics manufacturing for consumer devices
• Research and development in semiconductor technology

Prior Art

Information on prior art related to this specific method is not provided in the abstract.

Frequently Updated Research

There is ongoing research in the semiconductor industry to develop new methods and technologies for fabricating memory devices with improved performance and efficiency.

Questions about Semiconductor Memory Device Fabrication

Question 1

How does the addition of a channel passivation layer impact the thickness of the channel layer in the semiconductor memory device fabrication process?

The channel passivation layer is added to scale down the thickness of the channel layer in the first region, which helps in improving the overall performance and efficiency of the semiconductor memory device.

Question 2

What are the main components involved in the formation of the stacked body in this method of semiconductor memory device fabrication?

The stacked body is formed by alternately stacking a plurality of interlayer dielectric layers and a plurality of gate sacrificial layers, which are essential components in the fabrication process.

Original Abstract Submitted

A method for fabricating a semiconductor memory device may include the steps of: forming a stacked body on a source layer by alternately stacking a plurality of interlayer dielectric layers and a plurality of gate sacrificial layers; forming a plurality of channel holes through the stacked body, the channel holes each having a lower end extended into the source layer; forming a channel layer along the surfaces of the channel holes, the channel layer including a first region formed in the stacked body and a second region formed in the source layer; and forming a channel passivation layer in the first region to scale down the thickness of the channel layer of the first region.