18435272. SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Dong Hwan Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18435272 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
The semiconductor memory device described in the patent application includes a gate stack structure with interlayer insulating layers and conductive patterns, channel structures penetrating the gate stack structure, and a source layer formed on the gate stack structure.
- The gate stack structure consists of alternating interlayer insulating layers and conductive patterns stacked vertically on a substrate.
- Multiple channel structures penetrate the gate stack structure, with one end of each structure protruding beyond the boundary of the gate stack.
- The protruding end of each channel structure extends into the source layer, with a flat section at the end.
Potential Applications: - This technology could be applied in the development of advanced semiconductor memory devices with improved performance and efficiency. - It may find use in various electronic devices such as smartphones, tablets, and computers that require high-speed and reliable memory storage.
Problems Solved: - Enhances the functionality and efficiency of semiconductor memory devices. - Provides a more compact and integrated design for memory storage solutions.
Benefits: - Increased memory storage capacity. - Improved data processing speed and reliability. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Performance This technology could be utilized in the production of high-performance memory modules for consumer electronics, data centers, and other applications requiring fast and reliable memory storage solutions.
Prior Art: There is no specific information provided on prior art related to this technology in the patent application.
Frequently Updated Research: There is no information available on frequently updated research relevant to this technology at this time.
Questions about Semiconductor Memory Devices: 1. How does the protruding end portion of the channel structures contribute to the performance of the semiconductor memory device? 2. What are the potential challenges in manufacturing semiconductor memory devices with this innovative design?
Original Abstract Submitted
There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a gate stack structure including interlayer insulating layers and conductive patterns, which are alternately stacked in a vertical direction on a substrate; a plurality of channel structures penetrating the gate stack structure, each of the plurality of channel structures with one end portion protruding past a boundary of the gate stack structure; and a source layer formed on the gate stack structure. The protruding end portion of each of the plurality of channel structures extends into the source layer. The protruding end portion of each of the plurality of channel structures has a flat section.
