18347906. METHOD OF MANUFACTURING SEMICONDUCTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR
Organization Name
Inventor(s)
Dongyoung Kim of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347906 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR
The abstract describes a method of manufacturing a semiconductor device by selectively depositing a carbon layer on the sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure with a vertical stacked structure.
- Selective deposition of a carbon layer on sidewalls of a substrate mold
- Deposition of a sacrificial metal layer in a semiconductor device structure with a vertical stacked structure
Potential Applications: - Semiconductor manufacturing - Electronics industry
Problems Solved: - Enhancing the manufacturing process of semiconductor devices - Improving the performance of semiconductor devices
Benefits: - Increased efficiency in semiconductor manufacturing - Enhanced device performance
Commercial Applications: - Semiconductor fabrication companies - Electronics manufacturers
Prior Art: Information on prior methods of semiconductor device manufacturing
Frequently Updated Research: Ongoing research on semiconductor device manufacturing techniques
Questions about Semiconductor Device Manufacturing:
Question 1: How does the selective deposition of a carbon layer improve the semiconductor device manufacturing process? Answer: The selective deposition of a carbon layer helps enhance the performance and efficiency of semiconductor devices by providing a protective barrier on the sidewalls of the substrate mold.
Question 2: What are the potential challenges associated with depositing a sacrificial metal layer in a semiconductor device structure with a vertical stacked structure? Answer: Some potential challenges may include ensuring uniform deposition of the sacrificial metal layer and controlling the thickness of the layer to meet specific device requirements.
Original Abstract Submitted
A method of manufacturing a semiconductor device may include selectively depositing a carbon layer on sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure having a vertical stacked structure.
