Samsung electronics co., ltd. (20240188301). METHOD OF MANUFACTURING SEMICONDUCTOR simplified abstract
Contents
- 1 METHOD OF MANUFACTURING SEMICONDUCTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING SEMICONDUCTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MANUFACTURING SEMICONDUCTOR
Organization Name
Inventor(s)
Dongyoung Kim of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188301 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device by selectively depositing a carbon layer on the sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure with a vertical stacked structure.
- Selectively depositing a carbon layer on sidewalls of a substrate mold
- Depositing a sacrificial metal layer in a semiconductor device structure with a vertical stacked structure
Potential Applications
The technology could be applied in the manufacturing of advanced semiconductor devices with vertical stacked structures, such as memory chips, processors, and sensors.
Problems Solved
This method helps in improving the performance and reliability of semiconductor devices by enhancing the structural integrity and reducing the risk of defects during the manufacturing process.
Benefits
- Enhanced structural integrity of semiconductor devices - Reduced risk of defects during manufacturing - Improved performance and reliability of the devices
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the production of high-performance electronic devices with complex vertical stacked structures.
Possible Prior Art
Prior art may include methods of depositing sacrificial metal layers in semiconductor device structures, but the selective deposition of a carbon layer on the sidewalls of a substrate mold before this step may be a novel approach.
Unanswered Questions
How does the selective deposition of a carbon layer on the sidewalls improve the performance of the semiconductor device structure?
The selective deposition of a carbon layer on the sidewalls helps in enhancing the structural integrity of the semiconductor device by providing additional support and stability to the vertical stacked structure.
What are the specific semiconductor devices that could benefit the most from this manufacturing method?
Semiconductor devices with complex vertical stacked structures, such as advanced memory chips and processors, could benefit the most from this manufacturing method due to the improved performance and reliability it offers.
Original Abstract Submitted
a method of manufacturing a semiconductor device may include selectively depositing a carbon layer on sidewalls of a substrate mold before depositing a sacrificial metal layer in a semiconductor device structure having a vertical stacked structure.
