US Patent Application 18354631. CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD simplified abstract
Contents
CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Win-San Khwa of Taipei City (TW)
Meng-Fan Chang of Taichung City (TW)
Tung-Ying Lee of Hsinchu City (TW)
CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354631 titled 'CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD
Simplified Explanation
The patent application describes a control circuit, memory system, and control method for controlling memory cells in a memory array.
- The control circuit includes a program controller that programs the electrical characteristics of the memory cells based on the error tolerance of a specific type of data.
- The program controller creates a first electrical characteristic distribution and a second electrical characteristic distribution for the memory cells.
- The first overlapping area between the two distributions is smaller than a predetermined value.
- The purpose of this control circuit is to optimize the programming of memory cells to improve data storage and retrieval efficiency.
Original Abstract Submitted
A control circuit, a memory system and a control method are provided. The control circuit is configured to control a plurality of memory cells of a memory array. The control circuit comprises a program controller. The program is configured to program a first electrical characteristic distribution and a second electrical characteristic distribution of the memory cells according to error tolerance of a first bit of a data type. A first overlapping area between the first electrical characteristic distribution and the second electrical characteristic distribution is smaller than a first predetermined value.
