18371016. RESIST COMPOSITION AND PATTERN FORMING PROCESS simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
RESIST COMPOSITION AND PATTERN FORMING PROCESS
Organization Name
Inventor(s)
Jun Hatakeyama of Joetsu-shi (JP)
Tatsuya Yamahira of Joetsu-shi (JP)
Takayuki Fujiwara of Joetsu-shi (JP)
RESIST COMPOSITION AND PATTERN FORMING PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18371016 titled 'RESIST COMPOSITION AND PATTERN FORMING PROCESS
Simplified Explanation
The patent application describes a resist composition containing a quencher with a sulfonium salt composed of a C-Caromatic carboxylic acid anion substituted with a halogen atom or a halogen atom-containing group and a sulfonium cation.
- The resist composition includes a quencher with a sulfonium salt.
- The sulfonium salt is made up of a C-Caromatic carboxylic acid anion substituted with a halogen atom or a halogen atom-containing group and a sulfonium cation.
Potential Applications
This technology could be used in the semiconductor industry for photolithography processes.
Problems Solved
This technology helps improve the resolution and pattern fidelity in photolithography processes.
Benefits
The resist composition with the sulfonium salt quencher enhances the performance of photolithography processes by reducing line edge roughness and improving pattern transfer.
Potential Commercial Applications
"Enhancing Photolithography Processes with Sulfonium Salt Quencher Resist Composition"
Possible Prior Art
There may be prior art related to resist compositions for photolithography processes using different types of quenchers.
Unanswered Questions
How does the sulfonium salt quencher specifically improve the performance of the resist composition in photolithography processes?
The article does not delve into the specific mechanisms by which the sulfonium salt quencher enhances the performance of the resist composition.
Are there any limitations or drawbacks to using a sulfonium salt quencher in resist compositions for photolithography processes?
The article does not address any potential limitations or drawbacks associated with the use of sulfonium salt quenchers in resist compositions.
Original Abstract Submitted
A resist composition comprising a quencher containing a sulfonium salt composed of a C-Caromatic carboxylic acid anion substituted with a halogen atom or a halogen atom-containing group and a sulfonium cation having the following formula (1).