18221711. THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME simplified abstract (SanDisk Technologies LLC)
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
Organization Name
Inventor(s)
Koichi Matsuno of Fremont CA (US)
Kota Funayama of Yokkaichi (JP)
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18221711 titled 'THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
Simplified Explanation
The patent application describes a three-dimensional memory device with various innovative features:
- Alternating stack of insulating layers and electrically conductive layers with stepped surfaces in a contact region
- Memory openings vertically extending through the alternating stack
- Memory opening fill structures located in the memory openings
- Retro-stepped dielectric material portion overlying the alternating stack
- Finned dielectric pillar structures vertically extending through the alternating stack in the contact region
- Support pillar structures
- Layer contact via structures vertically extending through the retro-stepped dielectric material portion
Potential Applications: - High-density memory storage devices - Advanced computing systems
Problems Solved: - Increased memory storage capacity - Enhanced data processing speed
Benefits: - Improved performance of memory devices - Efficient use of space in electronic devices
Potential Commercial Applications: - Data centers - Consumer electronics industry
Possible Prior Art: - Previous patents related to three-dimensional memory devices - Research papers on memory storage technologies
Unanswered Questions:
1. How does the retro-stepped dielectric material portion contribute to the performance of the memory device? 2. Are there any limitations or challenges in implementing the described memory device in practical applications?
Original Abstract Submitted
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers having stepped surfaces in a contact region, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, at least one retro-stepped dielectric material portion overlying the alternating stack, finned dielectric pillar structures vertically extending through the alternating stack in the contact region, support pillar structures, and layer contact via structures vertically extending through the at least one retro-stepped dielectric material portion. Each of the layer contact via structures contacts a respective one of the electrically conductive layers and a respective one of the finned dielectric pillar structures.
