18353621. THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME simplified abstract (SanDisk Technologies LLC)
Contents
- 1 THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME
Organization Name
Inventor(s)
Naohiro Hosoda of Yokkaichi (JP)
Kazuki Isozumi of Yokkaichi (JP)
Masanori Tsutsumi of Yokkaichi (JP)
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18353621 titled 'THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME
Simplified Explanation
The memory device described in the patent application includes a complex structure of alternating insulating and conductive layers, with a vertical semiconductor channel extending through the layers. The channel is in contact with a source layer and is filled with a memory opening fill structure.
- The memory device consists of a first-tier alternating stack of insulating and conductive layers, a source layer, and a second-tier alternating stack above the source layer.
- A memory opening vertically extends through the first-tier stack, source layer, and second-tier stack, with a memory opening fill structure in place.
- The memory opening fill structure contains a vertical semiconductor channel that runs through the layers and is in contact with the source layer.
Potential Applications
This technology could be applied in:
- High-density memory storage devices
- Advanced computing systems
Problems Solved
This technology addresses:
- Increasing memory storage capacity
- Enhancing data processing speed
Benefits
The benefits of this technology include:
- Improved memory device performance
- Enhanced data storage capabilities
Potential Commercial Applications
This technology could be used in:
- Data centers
- Consumer electronics
Possible Prior Art
One possible prior art for this technology could be:
- Vertical memory structures with semiconductor channels
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and capacity?
The article does not provide a direct comparison with existing memory devices.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the challenges in scaling up production for commercial applications.
Original Abstract Submitted
A memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers, a source layer overlying the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying the source layer, a memory opening vertically extending through the first-tier alternating stack, the source layer, and the second-tier alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a vertical semiconductor channel that extends through the first-tier alternating stack, the source layer, and the second-tier alternating stack. The vertical semiconductor channel has sidewall in contact with the source layer.
