18352726. STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS simplified abstract (SanDisk Technologies LLC)
Contents
- 1 STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS
Organization Name
Inventor(s)
Takayuki Maekura of Yokkaichi (JP)
Koichi Matsuno of Fremont CA (US)
STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18352726 titled 'STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS
Simplified Explanation
The semiconductor structure described in the abstract includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fill structures located in the memory openings consisting of a vertical semiconductor channel and a vertical stack of memory cells. Additionally, an integrated line-and-via structure is provided, which is a unitary structure comprising a metallic plate portion that is a portion of or laterally contacts an electrically conductive layer, and a metallic via portion that vertically extends through dielectric material plates that overlie the metallic plate portion.
- The semiconductor structure consists of alternating insulating and conductive layers.
- Memory openings extend vertically through the stack.
- Memory opening fill structures contain vertical semiconductor channels and memory cells.
- An integrated line-and-via structure is included, with a metallic plate portion and a metallic via portion.
Potential Applications
This technology could be applied in:
- Semiconductor memory devices
- Integrated circuits
- High-speed data processing systems
Problems Solved
This technology helps in:
- Increasing memory density
- Enhancing data processing speed
- Improving overall performance of semiconductor devices
Benefits
The benefits of this technology include:
- Higher efficiency in data storage and retrieval
- Improved reliability of memory systems
- Enhanced functionality of integrated circuits
Potential Commercial Applications
This technology could find commercial applications in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art could be the use of similar integrated line-and-via structures in semiconductor devices to improve performance and functionality.
Unanswered Questions
How does this technology compare to existing memory structures in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory structures in terms of speed and efficiency. Further research or testing may be needed to determine the exact performance benefits of this technology.
What are the potential limitations or challenges in implementing this semiconductor structure in practical applications?
The article does not address any potential limitations or challenges in implementing this semiconductor structure in practical applications. Additional studies or experiments may be required to identify and overcome any obstacles in real-world implementation.
Original Abstract Submitted
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fill structures located in the memory openings and including a respective vertical semiconductor channel and a respective vertical stack of memory cells. An integrated line-and-via structure is provided, which is a unitary structure including a metallic plate portion that is a portion of or laterally contacts an electrically conductive layer, and a metallic via portion that vertically extends through dielectric material plates that overlie the metallic plate portion.
