18221689. THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME simplified abstract (SanDisk Technologies LLC)
Contents
- 1 THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
Organization Name
Inventor(s)
Koichi Matsuno of Fremont CA (US)
Kota Funayama of Yokkaichi (JP)
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18221689 titled 'THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
Simplified Explanation
The three-dimensional memory device described in the patent application includes an alternating stack of insulating layers and electrically conductive layers with stepped surfaces in a contact region, memory openings vertically extending through the alternating stack, memory opening fill structures in the memory openings, retro-stepped dielectric material portion, finned dielectric pillar structures, support pillar structures, and layer contact via structures.
- Insulating layers and electrically conductive layers are stacked alternately.
- Stepped surfaces are present in the contact region.
- Memory openings extend vertically through the alternating stack.
- Memory opening fill structures are located in the memory openings.
- Retro-stepped dielectric material portion overlies the alternating stack.
- Finned dielectric pillar structures extend vertically through the alternating stack in the contact region.
- Support pillar structures are included.
- Layer contact via structures extend through the retro-stepped dielectric material portion.
Potential Applications
The technology described in the patent application could be applied in:
- High-density memory devices
- Advanced computing systems
- Data storage solutions
Problems Solved
This technology addresses the following issues:
- Increasing memory density
- Enhancing data storage capabilities
- Improving overall performance of memory devices
Benefits
The benefits of this technology include:
- Higher memory capacity
- Faster data access speeds
- Improved efficiency in data storage and retrieval
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Memory chip manufacturing companies
- Electronics manufacturers
- Data centers
Possible Prior Art
One possible prior art related to this technology is the use of stacked memory structures in semiconductor devices to increase memory capacity and performance.
=== What are the specific materials used in the memory opening fill structures? The specific materials used in the memory opening fill structures are not mentioned in the abstract.
=== How does the retro-stepped dielectric material portion contribute to the overall functionality of the memory device? The retro-stepped dielectric material portion helps in providing insulation and structural support to the memory device, enhancing its stability and performance.
Original Abstract Submitted
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers having stepped surfaces in a contact region, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, at least one retro-stepped dielectric material portion overlying the alternating stack, finned dielectric pillar structures vertically extending through the alternating stack in the contact region, support pillar structures, and layer contact via structures vertically extending through the at least one retro-stepped dielectric material portion. Each of the layer contact via structures contacts a respective one of the electrically conductive layers and a respective one of the finned dielectric pillar structures.
