MEMORY DEVICE, MEMORY SYSTEM, AND METHOD FOR DATA CALCULATION WITH THE MEMORY DEVICE

Abstract: a memory device, a memory system, and a method for data calculation with the memory device are provided. the memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. the peripheral circuit includes a static random-access memory (sram) configured to obtain first data transmitted from a data interface of the memory device, page buffers configured to sense second data from the array of memory cells, and at least one process unit coupled to the sram and the page buffers via a data-path bus of the peripheral circuit. at least one process unit is configured to perform calculation based on the first data and the second data. the peripheral circuit further includes a control logic configured to program the second data into the array of memory cells.

Inventor(s): Yue Sheng, Shu Xie, Weijun Wan

CPC Classification: G11C11/419 (forming {static} cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger)

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