Substrate Processing Apparatus, Heat Insulating Structure, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium

Abstract: it is possible to reduce a flow rate of a purge gas for purging an inside of a heat insulating structure. there is provided a technique that includes: a process chamber in which a substrate is processed; a substrate support configured to support the substrate; and a heat insulating structure provided below the substrate support and including: a vessel configured such that a horizontal cross-sectional area of an upper part of an inner space of the vessel is greater than that of a lower part of the inner space of the vessel; a first inert gas supplier configured to be capable of supplying an inert gas into the vessel; and an opening through which an inside and an outside of the vessel is capable of communicating with each other.

Inventor(s): Yusaku OKAJIMA

CPC Classification: C23C16/4408 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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