18481855. APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
Contents
- 1 APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY
Organization Name
Inventor(s)
Hirokazu Ato of Sagamihara (JP)
APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18481855 titled 'APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY
Simplified Explanation
The patent application describes apparatuses and methods for memory arrays, specifically focusing on circuits in gap regions of the array. One example apparatus includes memory mats adjacent along a first direction, with a region between them. This region contains a local input/output (LIO) line running perpendicular to the first direction, along with a LIO driver and precharge circuit connected to the line. The LIO driver controls the voltage levels on the line based on data read or written to memory cells, while the LIO precharge circuit provides a precharge voltage to the LIO lines.
- Memory array apparatus with circuits in gap regions
- Includes memory mats and a region with LIO line, driver, and precharge circuit
- LIO driver controls voltage levels on the line based on data
- LIO precharge circuit provides precharge voltage to the LIO lines
Potential Applications
The technology described in this patent application could be applied in various memory storage devices, such as solid-state drives, computer memory modules, and other electronic devices requiring efficient memory arrays.
Problems Solved
This innovation addresses the need for improved circuitry in memory arrays, specifically focusing on gap regions between memory mats. By incorporating LIO lines, drivers, and precharge circuits, the apparatus aims to enhance data transfer and storage capabilities within the memory array.
Benefits
The benefits of this technology include increased data processing speeds, improved data reliability, and enhanced overall performance of memory arrays. By optimizing the circuits in gap regions, the apparatus can contribute to more efficient and effective memory storage solutions.
Potential Commercial Applications
- Enhanced solid-state drives
- Advanced computer memory modules
- Efficient electronic devices with improved memory arrays
Possible Prior Art
One potential prior art in this field could be the use of similar circuit configurations in memory arrays, focusing on optimizing data transfer and storage capabilities. However, the specific implementation of LIO lines, drivers, and precharge circuits in gap regions may be a novel aspect of this patent application.
Unanswered Questions
How does this technology compare to existing memory array circuit designs?
This article does not provide a direct comparison to existing memory array circuit designs, leaving the reader to wonder about the specific advantages and differences between this technology and current solutions.
What potential challenges or limitations could arise from implementing this technology in memory arrays?
The article does not address any potential challenges or limitations that could arise from implementing this technology, leaving room for speculation on the practical implications and feasibility of the described apparatus.
Original Abstract Submitted
Apparatuses and methods including circuits in gap regions of a memory array are disclosed. An example apparatus includes first and second memory mats adjacent along a first direction, and further includes a region between the first and second memory mats along the first direction. The region includes a local input/output (LIO) line that extends along a second direction perpendicular to the first direction through the region, and further includes a LIO driver and a LIO precharge circuit coupled to the LIO line. The LIO driver is configured to drive the LIO line to data voltage levels based on data read from memory cells or based on data to be written to memory cells, and the LIO precharge circuit is configured to provide a LIO precharge voltage to the LIO lines.
