18360128. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360128 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the patent application includes a peripheral region with high voltage transistors, lower lines, and a cell region. The lower lines are divided into high voltage and low voltage lines, which are connected in a specific layout to optimize performance.
- The semiconductor memory device comprises a peripheral region with high voltage transistors on the substrate.
- Lower lines are connected to the high voltage transistors, with first and second lower lines extending along a specific direction.
- The first lower lines include high voltage and low voltage lines, while the second lower lines include high voltage and low voltage lines.
- The layout of the lower lines is designed to improve the efficiency and performance of the memory device.
Potential Applications
This technology could be applied in:
- High-performance computing systems
- Data centers
- Automotive electronics
Problems Solved
This technology helps address:
- Efficient data storage and retrieval
- High voltage requirements in memory devices
- Optimization of memory device layout for improved performance
Benefits
The benefits of this technology include:
- Enhanced memory device performance
- Improved efficiency in data processing
- Higher reliability in high voltage applications
Potential Commercial Applications
This technology could be commercially applied in:
- Memory chip manufacturing
- Semiconductor industry
- Electronics manufacturing
Possible Prior Art
One possible prior art in this field is the use of optimized layouts for memory devices to improve performance and efficiency.
Unanswered Questions
How does this technology compare to existing memory device layouts in terms of performance and efficiency?
The article does not provide a direct comparison with existing memory device layouts to evaluate the advantages of this technology.
What specific challenges were faced during the development and implementation of this technology?
The article does not detail the specific challenges encountered during the development and implementation of this technology.
Original Abstract Submitted
Disclosed are semiconductor memory devices comprising a peripheral region including a substrate, high voltage transistors on the substrate, first lower lines connected to the high voltage transistors, and second lower lines connected to the first lower lines, and a cell region on the peripheral region. The first and the second lower lines extend along a first direction parallel to an upper surface of the substrate. The first lower lines include first high voltage lines and first low voltage lines. The second lower lines include second high voltage lines and second low voltage lines. The second high voltage lines and the first low voltage lines separated in a second direction parallel to the upper surface of the substrate and a third direction perpendicular to the upper surface of the substrate, and the second low voltage lines and the first high voltage lines separated in the second direction and the third direction.
