20250185518. Method Manufacturing Spin-orbit Tor (COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES)
METHOD FOR MANUFACTURING A SPIN-ORBIT TORQUE EFFECT MEMORY
Abstract: a method for manufacturing a spin-orbit torque effect memory, referred to as sot memory, which is simple to execute and which offers a memory with a switching efficiency at least equivalent to the sot memories of prior art. for this, the manufacturing method includes depositing a conductive layer, referred to as a spacer, onto a magnetic stack; etching the magnetic stack using the spacer as an etching mask so as to form a magnetic tunnel junction; and forming an sot track on the spacer.
Inventor(s): Bernard VIALA, Kévin GARELLO, Louis HUTIN, Bertrand DELAET, Marco BIAGI
CPC Classification: H10N50/10 (Magnetoresistive devices)
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