18518729. SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the dielectric constant of the intermediate dielectric layer impact the overall performance of the semiconductor device?
- 1.9.3 What are the potential challenges in integrating a multi-layer gate dielectric structure into semiconductor manufacturing processes?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Kyung-Eun Byun of Suwon-si (KR)
Junyoung Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518729 titled 'SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a multi-layer gate dielectric layer and a channel layer with a two-dimensional semiconductor material. The gate dielectric layer consists of a high-k dielectric layer and an intermediate dielectric layer, with the latter having a lower dielectric constant than the former. The device also features a gate electrode, as well as source and drain electrodes on the channel layer.
- Channel layer with two-dimensional semiconductor material
- Multi-layer gate dielectric layer with high-k dielectric and intermediate dielectric layers
- Gate electrode, source, and drain electrodes
- Intermediate dielectric layer with lower dielectric constant than high-k dielectric layer
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, communication systems, and sensor technologies.
Problems Solved
This innovation addresses the need for improved performance and efficiency in semiconductor devices by utilizing a multi-layer gate dielectric structure with optimized dielectric constants, enhancing the overall functionality and reliability of the devices.
Benefits
The use of a multi-layer gate dielectric layer with high-k and intermediate dielectric materials can lead to enhanced device performance, reduced power consumption, and increased operational stability, contributing to the advancement of semiconductor technology.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of next-generation electronic devices, including smartphones, tablets, laptops, and other consumer electronics, as well as industrial and automotive applications.
Possible Prior Art
Prior art in the field of semiconductor devices may include research and patents related to gate dielectric materials, two-dimensional semiconductor materials, and device structures aimed at improving performance and efficiency in electronic devices.
Unanswered Questions
How does the dielectric constant of the intermediate dielectric layer impact the overall performance of the semiconductor device?
The dielectric constant of the intermediate dielectric layer plays a crucial role in determining the capacitance and charge storage capabilities of the device, affecting its speed, power consumption, and overall efficiency.
What are the potential challenges in integrating a multi-layer gate dielectric structure into semiconductor manufacturing processes?
Integrating a multi-layer gate dielectric structure may pose challenges in terms of material compatibility, process complexity, and cost-effectiveness, requiring careful optimization and control during fabrication to ensure reliable device performance.
Original Abstract Submitted
A semiconductor device may include a multi-layer gate dielectric layer and an electronic apparatus including the semiconductor device. The semiconductor device may include a channel layer including a two-dimensional semiconductor material, a gate dielectric layer on a first area of the channel layer, a gate electrode on the gate dielectric layer, and source and drain electrodes in a second area of the channel layer. The gate dielectric layer may include a high-k dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer may be between the high-k dielectric layer and the channel layer. A dielectric constant of the intermediate dielectric layer may be less than a dielectric constant of the high-k dielectric layer.
