18228824. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Myung Gil Kang of Suwon-si (KR)
Younggwon Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18228824 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a unique structure with vertically stacked semiconductor patterns, gate electrodes, and gate dielectric layers. Here are some key points to explain the innovation:
- The device features semiconductor patterns stacked on top of each other, with inner electrodes between them and an outer electrode on the topmost pattern.
- A gate electrode is present on the semiconductor patterns, with inner gate dielectric layers adjacent to the inner electrodes and outer gate dielectric layers extending from bottom to lateral surfaces of the outer electrode.
- The outer electrode and outer gate dielectric layer have an inverted T shape, providing a specific configuration for improved performance.
Potential Applications
The technology described in the patent application could be applied in various semiconductor devices, such as transistors, integrated circuits, and memory devices.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the structure of the gate electrode and gate dielectric layers.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in semiconductor applications.
Potential Commercial Applications
The innovative semiconductor device structure could find commercial applications in the electronics industry, particularly in the development of advanced semiconductor products for various applications.
Possible Prior Art
One possible prior art for this technology could be the use of similar stacked structures in semiconductor devices, but the specific configuration with an inverted T shape for the outer electrode and gate dielectric layer may be unique to this patent application.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this technology.
What specific manufacturing processes are required to implement this unique semiconductor device structure?
The article does not detail the specific manufacturing processes or techniques needed to fabricate the semiconductor device with the described structure.
Original Abstract Submitted
Disclosed is a semiconductor device comprising a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns spaced apart from and vertically stacked on each other, a source/drain pattern connected to the semiconductor patterns having a p-type, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a gate dielectric layer between the gate electrode and the semiconductor patterns and including an inner gate dielectric layer adjacent to the inner electrode and an outer gate dielectric layer that extends from bottom to lateral surfaces of the outer electrode. The outer electrode and the outer gate dielectric layer have an inverted T shape.
